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(Ga,In)P/GaAsSb DHBTs with different emitter sizes were fabricated with the standard triple‐mesa process on wafers with GaInP [Ga] emitter contents of 0, 0.15, 0.24 in the emitter. The effect of the gallium content on the DC and RF characteristics of the DHBTs was studied. It was found that gain increases as the Ga mole fraction increases. This is due to a reduced surface recombination current and...
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