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We present the position‐controlled growth of GaN nanotubes with coaxial GaInN quantum wells by using ZnO nanowires grown on top of GaN pyramids as templates. High resolution scanning transmission electron microscopy allows us to perform a detailed structural analysis of individual tubes. In particular, we report about structural properties like indium incorporation, thickness, and homogeneity of quantum...
A set of GaN/GaInN single quantum wells (SQWs) were grown on c‐plane GaN/sapphire templates using metal organic vapor phase epitaxy (MOVPE) and atomic layer epitaxy (ALE). The structural information on the interfaces and surfaces was obtained by fitting the experimental X‐ray spectra and was compared between MOVPE and ALE mode. The X‐ray crystal truncation rod (CTR) scattering measurement results...
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