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The degradation of transient OFF‐state leakage current in AlGaN/GaN HEMTs induced by ON‐state gate overdrive was observed and studied. The OFF‐state leakage current increases significantly with a pre‐ ON‐state gate overdrive. It takes more than 30 s for the leakage current decay to its equilibrium level in dark. The decay processes follow a stretched‐exponential law. We propose that this degradation...
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