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The results of studies focused on understanding materials‐electrical correlations for GaN‐based films deposited on 150 mm diameter Si wafers in a batch MOCVD system are reported. A wide range of film stress and electrical conduction is observed at consistent and good X‐ray FWHM values. The vertical leakage currents show a strong asymmetry on the polarity of the bias voltage. Film stress (wafer bow)...
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