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Twentyfive years after the publication of P. N. Favennec's seminal paper on luminescence from rare‐earth‐doped semiconductors (Electron. Lett. 25, 718–719 (1989), with 390+ citations to date) we examine the long shadow it has cast on recent studies of europium‐doped GaN, aimed at substituting for InN‐rich InGaN in red‐light‐emitting devices (LEDs). According to Favennec's principle, wider band gap...
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