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We evidence zero‐dimensional exciton states trapped on isoelectronic Se centers in CdTe quantum wells, δ‐doped with Se. Thanks to special precautions taken to have very high purity CdTe heterostructures, it is possible to observe, in photoluminescence spectra, sharp discrete lines arising from individual centers related to the Se doping. These emission lines appear at about 40 meV below the CdTe band...
Depending on the shutter sequence used to initiate CdTe deposition, either (100) or (111) CdTe layers can be reproducibly grown on (100) ZnSe/GaAs substrates. Using a hexagonal surface model for (111) CdTe we propose a mechanism for the crystalline orientation selectivity. We use time‐resolved Kerr rotation to monitor the electron spin dynamics in these films. While the spin lifetime is found to depend...
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