We adopted the simple top‐down etching to fabricate site‐ and dimension‐controlled InGaN quantum dots. Each quantum dot is disk shaped and embedded in a nanoscale pillar. Arrays of nanopillars with varying densities and nanopillar diameters were fabricated from an InGaN/GaN single quantum well using inductively‐coupled plasma reactive‐ion etching. Micro‐photoluminescence (µ‐PL) was used to characterize the emission properties of individual and ensemble of nanopillars. Strong and distinct PL signal of a single nanopillar was observed even at the room temperature. The emission was found to exhibit characteristics from a discrete energy state that is homogeneously broadened. The ensemble of nanopillars exhibited a similar emission linewidth as the single nanopillar, indicating a well controlled quantum dot dimensions and uniformity. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)