We report the effect of Mg doping on the growth kinetics of semipolar GaN(11‐22) synthesized by plasma‐assisted molecular‐beam epitaxy. Mg tends to segregate on the surface, inhibiting the formation of the self‐regulated Ga film which is used as a surfactant for the growth of undoped and Si‐doped GaN(11‐22). As a result, the growth widow is reduced for Mg doped layers, and we observe a certain deterioration of the surface morphology. In spite of this difficulties, homogenous Mg incorporation is achieved and layers display p ‐type conductivity for Mg atomic concentration higher than 7×1018 cm‐3. Microscopy studies show no evidence of the pyramidal defects or polarity inversion domains found in Mg‐doped GaN(0001). (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)