The effects of internal polarization‐related drift and diffusion on the emitted terahertz radiation from nonpolar and polar nitride semiconductors is demonstrated in the article by G. D. Metcalfe et al., pp. 2455. Enhanced terahertz radiation is observed from c ‐plane InN/InGaN multiple quantum wells due to surface normal transport in electric fields associated with the termination of internal polarization at the well/barrier interfaces. From high stacking fault density nonpolar GaN, further enhanced THz emission is observed due to lateral transport in built‐in fields along the c‐axis associated with stacking fault terminated internal polarization. As shown in this frontispiece plot of s‐polarized time‐resolved terahertz emission from m ‐plane GaN, in‐plane transport of photoexcited carriers proceeds parallel to the electric field, leading to terahertz radiation polarized preferentially along the c‐axis of the sample. When the sample is rotated by 180°, the lateral electric field also rotates by 180°, causing the photoexcited carriers to accelerate in the opposite direction, which is observed as a flip in the terahertz waveform polarity.