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AlGaN/GaN MIS‐HEMTs with two levels of source field‐plates were studied by means of pulsed I–V measurements. These measurements showed that the presence of a source field‐plate itself is not enough to guarantee a low dynamic RDS‐ON at high OFF‐state drain‐bias. Simulations of the electric field were carried out to explain the experimental results. It was found that not only does the intensity of...
We study comparatively the RF and the noise characteristics for the In0.7Ga0.3As, InAs/AlSb and InSb high electron mobility transistors (HEMTs) by using the quantum corrected Monte Carlo (QC‐MC) simulation. The increase in the current fluctuation <Δ> with Vds is caused by the increase in the electron velocity variance (i.e., the electron heating); this indicates clearly that the low...
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