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Gd‐doped Sr0.5Ba0.5Nb2O6 (SBN50) thin films with Gd‐doping concentration ranging from 1 to 4% are grown on Pt‐coated MgO (100) substrates using pulsed laser deposition technique. X‐ray diffraction studies show that the films are highly (001)‐oriented and epitaxially grown on the substrates. Electrical measurements show that the Gd‐SBN films possess good ferroelectric properties. Ramanent polarization...
Pulsed laser deposition (PLD) is used to grow ‐oriented single‐crystalline β‐gallium oxide (β‐Ga2O3) thin films on c‐plane sapphire substrates by optimized growth temperature and pressure. The morphology and crystallinity of the thin films are examined using X‐ray diffraction and atomic force microscopy. The thin films are used as the semiconductor layer for metal–semiconductor–metal (MSM)...
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