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Herein, Yb/p–Se/p–WO3/Yb heterojunctions are employed as multifunctional devices. The devices which show back‐to‐back Schottky (BBS) diode characteristics are prepared by the thermal evaporation method under a vacuum pressure of 10−5 mbar. The structural and morphological analyses on these heterojunctions have shown the growth of amorphous WO3 onto meshed nano/microwire network of hexagonal selenium...
Herein, the results are reviewed concerning reliability of high‐electron mobility transistors (HEMTs) based on GaN, which currently represent the technology of choice for high‐efficiency microwave and millimeter‐wave power amplifiers. Several failure mechanisms of these devices are extensively studied, including converse piezoelectric effects, formation of conductive percolation paths at the edge...
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