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A metal–insulator–semiconductor high‐electron‐mobility transistor (MIS‐HEMT) with Al2O3/SiNx (SiNx next to semiconductor) double insulators is proposed to obtain lower gate leakage and lower current collapse simultaneously and is comparatively studied in this article. SiNx directly next to the (Al)GaN induces fewer interface traps and provides better passivation, and Al2O3 can greatly reduce...
Herein, Ta2O5 high‐k gate dielectric‐based GaN high electron‐mobility transistors (HEMTs) with a high ION/IOFF ratio and low gate leakage current are demonstrated without any significant deterioration of the other performance parameters. Ta2O5 with an average surface roughness of 1.8 nm and a dielectric constant of ≈26 are grown by sputtering and annealing in O2. The bandgap, valence, and conduction...
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