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Wide bandgap (WBG) semiconductors such as gallium nitride (GaN) and silicon carbide (SiC) are rapidly making inroads into the power semiconductor markets dominated by the incumbent silicon (Si). However, the performance of these WBG semiconductors has not reached the ideal material limits and thus, leaves significant room for improvement. In this regard, for medium voltage (600–1700 V)/high current...
Herein, the main factors and mechanisms that limit the reliability of gallium nitride (GaN)‐based light‐emitting diodes (LEDs) are reviewed. An overview of the defects characterization techniques most relevant for wide‐bandgap diodes is provided first. Then, by introducing a catalogue of traps and deep levels in GaN and computer‐aided simulations, it is shown which types of defects are more detrimental...
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