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Herein, the main factors and mechanisms that limit the reliability of gallium nitride (GaN)‐based light‐emitting diodes (LEDs) are reviewed. An overview of the defects characterization techniques most relevant for wide‐bandgap diodes is provided first. Then, by introducing a catalogue of traps and deep levels in GaN and computer‐aided simulations, it is shown which types of defects are more detrimental...
Herein, the reported data on boron–hydrogen defects HB are analyzed to conclude that there are at least two independent hydrogen ions, H+(1) and H+(2), that passivate boron by forming the HB(1) and HB(2) defects, respectively. The two H+(i)/HB(i) subsystems differ remarkably by the value of the transport parameter DK (a product of the H+ diffusivity and the equilibrium dissociation constant of HB)...
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