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Plasma provides specific adjustment of solid‐state surface properties offering an alternative to high temperature treatment. Herein, hydrogen plasma treatment of monocrystalline (0001) ZnO surface is studied in an inductively coupled plasma reactor with reduced capacitively coupled plasma mode. The crucial role of electrical grounding of the sample holder for plasma etching and related changes in...
The realization of several future electronic and optoelectronic Si‐based devices is impeded by the limited critical thickness of strained, pseudomorphic, and Ge‐rich Si1−xGex layers grown on Si(001) substrates, i.e., before their relaxation. Herein, atomic force microscopy is used to investigate the surface morphology of about 170 Si1−xGex/Si(001) samples with various Ge compositions ranging from...
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