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Herein, a built‐in normally off GaN‐based high‐electron‐mobility light‐emitting transistor is designed and simulated. The proposed structure can significantly minimize the device area, eliminate the parasitic component introduced by metal interconnectors, ensure a fail‐safe operation owing to its normally off operating condition, and it affords fabrication simplicity, a preferable quality for display...
Herein, the results are reviewed concerning reliability of high‐electron mobility transistors (HEMTs) based on GaN, which currently represent the technology of choice for high‐efficiency microwave and millimeter‐wave power amplifiers. Several failure mechanisms of these devices are extensively studied, including converse piezoelectric effects, formation of conductive percolation paths at the edge...