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Single‐layer Shockley‐type stacking fault (SSF) expansion in 4H‐SiC due to irradiation by a focused e‐beam in the scan mode with a different rate and at fixed points has been studied. It is shown that the focused e‐beam enhances the 30° Si‐core partial dislocation glide at room and liquid nitrogen temperatures only at distances smaller than about 10 μm. The dislocations are found to glide as straight...
Multiphase coexistence is the key to rendering samples with superior piezoelectric properties for BaTiO3 ceramics. Ba(Ti1−xSnx)O3 (BTS, x = 0.0–0.30) ceramics are prepared by the traditional solid‐state method. Orthorhombic (O) and tetragonal (T) phases are visually observed to coexist only in the ceramics with the low‐doping of Sn (x = 0.025–0.075) by electron backscattered diffraction (EBSD). The...