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In typical industrial processing of tunnel oxide passivated contact (TOPCon) solar cells, poly‐Si is deposited on the entire back of the cells. During the deposition process, a wrap‐around of poly‐Si onto the edges and the front side of the cells is virtually unavoidable if chemical vapor deposition processes are used. Plasma‐enhanced chemical vapor deposition (PECVD) is used to investigate very...
This work investigates how the thickness of the polysilicon layer and temperatures during contact sintering influence the properties of SiOx/polysilicon passivated contacts. The n+ polysilicon layers deposited by low‐pressure chemical vapor deposition (LPCVD) on top of a thin wet chemically grown interface oxide layer providing chemical and field‐effect passivation on n‐type monocrystalline silicon...
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