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The lasing characteristics of separate‐confinement‐heterostructure multi‐quantum‐well (SCH‐MQW) laser diodes (LDs) grown on InP templates bonded to a SiO2/Si substrate using the hydrophilic bonding method are investigated. The layers of the SCH seven‐quantum‐well‐structured LD are grown by low‐pressure metal–organic vapor‐phase epitaxy. After the pulsed power supply of a high‐mesa waveguide is tested...
Over the past ≈60 years, the continuing development of III–V compound semiconductor devices, especially infrared and visible light‐emitting diodes and laser diodes, has changed the world for the better and has created entirely new industries or dramatically improved system or product performance and efficiency. Many of the seminal advances in this field have relied upon a few key innovations, e.g...
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