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The impact of in situ annealing on the electrical properties of AlN/(111) p‐type silicon metal–insulator–semiconductor (MIS) capacitors is studied by capacitance–voltage (C–V) and deep‐level transient spectroscopy (DLTS). It is demonstrated that the in‐diffusion of Al leads to an enhanced free hole concentration close to the interface, which becomes more pronounced for the in situ annealed capacitors...
The use of silicon wafer substrates with a diameter of 300 mm for the manufacturing of electronic devices strongly increases the overall productivity of a device manufacturing line. However, float‐zone (FZ) silicon, which is traditionally used for insulated gate bipolar transistors (IGBTs), is not available for wafer diameters exceeding 200 mm. Therefore, a silicon material fabricated by the magnetic...
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