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Oxygen precipitation properties in the as‐grown defect‐free region of nitrogen‐doped Czochralski silicon (Cz‐Si) single crystals with very low oxygen concentrations ([Oi]) are investigated. At [Oi] values of 4.6–5.9 × 1017 atoms cm−3, oxide precipitates with a high density of 109 cm−3 are generated owing to the enhancement in oxygen precipitation by nitrogen‐doping. In contrast, at [Oi] values of...
The dependence of the gettering efficiency for copper impurity in n‐type silicon wafers on the concentration of a dopant such as phosphorus, arsenic, or antimony is investigated by chemical analysis of the copper concentration and the observation of copper precipitates. It is found that the gettering efficiency decreases gradually with increasing dopant concentration in the range of 1014–1019 cm−3...
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