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Carrier‐induced efficiency degradation of multi‐crystalline Si (mc‐Si) solar cells is studied in situ by detecting the electroluminescence (EL) from the cells. Series of spatially resolved EL images of the cells during constant forward current operation at low (24 °C) and at elevated (70 °C) temperatures are recorded. The degradation induced changes in the open circuit voltage correlate well with...
Multi‐crystalline Si (mc‐Si) solar cells subjected to carrier‐induced efficiency degradation at elevated temperatures are studied using deep‐level transient spectroscopy (DLTS), capacitance‐voltage, and electroluminescence (EL) measurements. Commercially available passivated emitter and rear cell (PERC) mc‐Si solar cells are investigated after short annealing in the dark (at T = 200 °C for 20 min),...
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