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The InGaN/AlGaN multiquantum‐well microrod‐array structure is grown on c‐plane GaN template with SiO2 microholes patterned as a mask. The surface morphology exhibits the accurately ordered microrod‐array structure. Temperature‐dependent photoluminescence (PL) measurement indicates that the PL peaks redshift as the temperature increases. Room‐temperature PL and cathode luminescence spectra show that...
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