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ZnO thin films and nanostructures are applied in various devices due to their interesting optical and electrical properties. Atomic layer deposition (ALD) of ZnO offers unique advantages such as precise thickness control, uniformity, and conformality. Using reactive plasma species as the co‐reactant (PE‐ALD) allows further enhancement of the material characteristics and tunable properties. The substrate...
The initial stages of ZnO atomic layer deposition (ALD) on (InGaAs) are studied by monitoring the ZnO film thickness in situ with spectroscopic ellipsometry. Using diethylzinc (DEZn) and water, at a substrate temperature equal to 120 °C, the presence of two different ZnO growth regimes prior to steady growth is found: a slow ZnO nucleation on InGaAs, (growth delay), then...
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