The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Resistance switching (RS) characteristics of Al/ZnO:Li/LaB6 and Al/ZnO:Li/La2O3/LaB6 devices in which LaB6 and lithium‐doped ZnO (ZnO:Li) films are regarded as shallow work function metal and p‐type semiconductor, respectively, are studied. The alternation from bistable unipolar memory switching (URS) to monostable threshold switching (MTS) in the Al/ZnO:Li/LaB6 device is observed. These two switching...
Abstractauthoren We present a dopant‐free CMOS technology where n‐ and p‐type semiconductor contacts are realized exclusively based on ultrathin silicon nitrides and metals with appropriate work function. Ellipsometry and FTIR measurements are applied to characterize the thermally grown nitride layers. Unipolar behavior and ohmic contact behavior are accomplished showing that with an appropriate nitride...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.