In this work, the authors present a study of the resistive switching effect (RS) in Co0.2TiO3.2 (CTO) in a thin film structure Pt/CTO/ITO. The identification of a structure of low crystallinity with different deposition times is seen in the diffractograms with a certain tendency of orientation in the plane (311) of the inverted spinel of space group Fd‐3m. Electrical measurements I–V highlight the appearance of RS effect predominated by unipolar filamentary mechanism. The retention of charge in the device shows good stability and separation of HRS‐LRS states with ROFF/RON ≈106 ratio. The authors are able to demonstrate that Co0.2TiO3.2 presents promising performance for application in non‐volatile memories.