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Fluorene‐type (C13H10) thin films were synthesized by using the mixture of biphenyl (C12H10) and methane (CH4) plasma. The reactor is a parallel plate installation; upper electrode is connected to 13.56 MHz rf power and lower electrode is grounded. The thin films were deposited by applying a negative bias potential between the substrate and the wall of reactor. The films were investigated by residual...
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