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Ion bombardment of photoresist materials during plasma etching results in the formation of a surface dense amorphous carbon (DAC) layer that contributes to both etch resistance and the development of surface roughness. Real‐time ellipsometric measurements/analysis reveals that a C4F8‐containing plasma interacts with an Ar‐plasma‐formed DAC layer to produce a modified DAC/fluorocarbon (FC) layer by...
This study tracks the physical aging behavior of coated and uncoated ultra‐thin poly(1‐trimethylsilyl‐1‐propyne) (PTMSP) films on silicon wafers based on the refractive index using ellipsometry. The measured refractive index directly correlates with the free volume and hence the physical aging progression. Plasma‐enhanced chemical vapor deposition (PECVD) creates coatings with different thicknesses...
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