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Silicon oxide nanowires are synthesised below 523 K by a non‐VLS mechanism on different substrates: Fe‐0.5 wt.‐%Si and Fe‐1.5 wt.‐%Si alloys and silicon wafers coated or not by 30‐nm thick coatings of iron. An Ar‐O2 micro‐afterglow is used to feed the substrate with oxidising species over an area of ≈2 mm2. In this area, circular bundles of nanowires appear after 15 min and are randomly distributed...
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