Tandem dye‐sensitized solar cell devices (t‐DSSCs) are a potential alternative to Si‐based solar cells as autonomous power sources. Nevertheless, their further development suffers from the poor quality of the p‐type material, that is, NiO. In this study, N‐doped TiO2 thin films exhibiting a p‐type conductivity (p‐TiO2:N) are successfully grown by co‐reactive magnetron sputtering. Its p‐type conductivity is correlated to the incorporation of N atoms in substitutional positions which is controllable by carefully tuning the ratio between O2 and N2 reactive gases during the growth of the material. Furthermore, it reveals a three to six times higher mobility of the carriers (1.5–3.1 cm2·V−1·s−1) than sputtered NiO. These results are in particular interest for the development of new TiO2‐based t‐DSSCs.