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Most traditional 2D materials have small bandgaps, resulting in low laser damage thresholds and limiting their applications in the ultraviolet region. Recently experimentally synthesized 2D GaN and ZnO can be such candidates due to their wide bandgaps, high charge mobilities, and optical transparency. Here, the van der Waals heterostructure GaN/ZnO is predicted that can exhibit both wide bandgap and...
MAlSiN3:Eu2+ (M = Ca, Sr) is commonly used in high‐power phosphor‐converted white‐light‐emitting diodes and laser diodes to promote their color‐rendering index. However, the wide application of this phosphor is limited by the degradation of its luminescent properties in high‐temperature, high‐humidity, and high‐sulfur‐content environment. Here, the degradation mechanism of the (Sr,Ca)AlSiN3:Eu2+ (SCASN)...