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Raman spectra of a low albite single crystal were collected during annealing at 1076°C for up to 46 days. At seven annealing stages, the single crystal structure was refined by X‐ray intensity data to determine the degree of Al—Si order using the tetrahedral bond distances. Single‐crystal X‐ray diffraction showed that residuals in the difference‐Fourier map of the electron density and atomic displacement...
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