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The growth and characterization of high‐quality ultrathin Fe3O4 films on semiconductor substrates is a key step for spintronic devices. A stable, single‐crystalline ultrathin Fe3O4 film on GaAs(001) substrate is obtained by post‐growth annealing of epitaxial Fe film with thicknesses of 5 and 12 nm in air. Raman spectroscopy shows a high ability to convincingly characterize the stoichiometry, epitaxial...
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