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The potential of gallium nitride–distributed transferred electron device is theoretically investigated for the realization of terahertz radio frequency (RF) power sources. The device numerical physical modeling relies on a 2D time‐domain electromagnetism/transport simulator. It is based on the coupled solution of the Maxwell and energy‐momentum macroscopic transport equations. The study is focused...
This paper presents the design, electromagnetic simulation strategies and experimental characterisation of a two‐stage stacked‐FET cell in a 100 nm GaN on Si technology around 18.8 GHz, suited for Ka band satellite downlink applications. A good agreement is found between the electromagnetic simulations and the measured performance on the manufactured prototype, thus demonstrating that a successful...
Discovery of wideband gap semiconductor materials has boosted the field of power electronics. Fabrication of HEMT has overcome the drawback of lower mobility and ON‐state current of wide bandgap materials. However, due to lower ON‐state current earlier proposed devices suffer from poor ON‐state resistance; hence, in this work dual gate technique has been proposed. To further switch the device characteristics...
This work focuses on the equivalent‐circuit modeling of microwave field‐effect transistors. Although the purely direct approach allows obtaining a good prediction accuracy in a straightforward way without the need of any optimization, optimization algorithms are often used to achieve an improved accuracy at the cost of a higher modeling complexity. The pros and cons of empowering the direct approach...
This paper offers a wide‐operating range electric vehicle charger design by employing an interleaved inductor–inductor–capacitor iL2C DC–DC converter. It uses two parallel L2C converters with 8‐GaN switches on the primary side and a shared rectifier circuit on the secondary side, which it also enhances the circulating current, conduction losses, and current sharing. For iL2C converter, a constant...
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