A proposed RFCMOS reliability subcircuit model to evaluate the transceiver frontend circuits for 5G new radio (NR) networks sub‐6‐GHz application is presented. When studied 1‐year operational performance considering hot‐carrier stress in circuit level, the common‐source LNA circuit is robust in gain and noise figure than common‐gate common‐source LNA circuit, and Class‐A power amplifier loses gain 52%. However, in transceiver system level, the receiver‐used two‐stage common‐gate common‐source LNA shows robust than used common‐source LNA. The transmitter's gain and output power exhibit a strong relationship with performance of Class‐A power amplifier after hot‐carrier stress. When the receiver using the overdriven bias 3.1 V 1 year predicted by proposed model, the EIS is −89.7 dBm, which still meet 5G FR1 standard though the gain degraded to 17 dB; transmitter overdriven at bias 3.3 V, the least output power is 19.1 dBm, which still meet 5G FR1 standard, though the IIP3 worsen to 13%.