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A reliable and rapid manufacturing process of 2D semiconductor material remains a fundamental challenge toward its successful incorporation in high‐performance nanoelectronics. In article number 1703031, Ji‐Hoon Ahn, Seong‐Jun Jeong, and co‐workers introduce inhibitor‐utilizing atomic layer deposition (iALD) as a noval method to meet these requirements on a wafer‐scale. They successfully demonstrate...
A reliable and rapid manufacturing process of molybdenum disulfide (MoS2) with atomic‐scale thicknesses remains a fundamental challenge toward its successful incorporation into high‐performance nanoelectronics. It is imperative to achieve rapid and scalable production of MoS2 exhibiting high carrier mobility and excellent on/off current ratios simultaneously. Herein, inhibitor‐utilizing atomic layer...
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