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The use of vertically oriented graphene nanowalls as a buffer layer for the growth of high‐quality AlN film on a sapphire substrate to improve heat dissipation is proposed by Tongbo Wei, Zhiqiang Liu, Peng Gao, Zhongfan Liu, and co‐workers in article number 1901624. Thus, their as‐fabricated light‐emitting diode shows a 37% increasement of light output power under a high injection current (350 mA)...
For III‐nitride‐based devices, such as high‐brightness light‐emitting diodes (LEDs), the poor heat dissipation of the sapphire substrate is deleterious to the energy efficiency and restricts many of their applications. Herein, the role of vertically oriented graphene (VG) nanowalls as a buffer layer for improving the heat dissipation in AlN films on sapphire substrates is studied. It is found that...
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