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The semiconductor of an organic field‐effect transistor is stripped with adhesive tape, yielding an exposed gate dielectric, accessible for various characterization techniques. By using scanning Kelvin probe microscopy we reveal that trapped charges after gate bias stress are located at the gate dielectric and not in the semiconductor. Charging of the gate dielectric is confirmed by the fact that...
Organic field‐effect transistors (OFETs) with impressively high hole mobilities over 10 cm2 V−1 s−1 and electron mobilities over 1 cm2 V−1 s−1 have been reported in the past few years. However, significant non‐ideal electrical characteristics, e.g., voltage‐dependent mobilities, have been widely observed in both small‐molecule and polymer systems. This issue makes the accurate evaluation of the electrical...
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