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Two‐dimensional (2D) photodetecting materials have shown superior performances over traditional materials (e.g., silicon, perylenes), which demonstrate low responsivity (R) (<1 AW−1), external quantum efficiency (EQE) (<100%), and limited detection bandwidth. Recently, 2D indium selenide (InSe) emerged as high‐performance active material in field‐effect transistors and photodetectors, whose...
2D materials have shown great promise for next‐generation high‐performance photodetectors. However, the performance of photodetectors based on 2D materials is generally limited by the tradeoff between photoresponsivity and photodetectivity. Here, a novel junction field‐effect transistor (JFET) photodetector consisting of a PdSe2 gate and MoS2 channel is constructed to realize high responsivity and...
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