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Edges and point defects in layered dichalcogenides are important for tuning their electronic and magnetic properties. By combining scanning tunneling microscopy (STM) with density functional theory (DFT), the electronic structure of edges and point defects in 2D‐PtSe2 are investigated where the 1.8 eV bandgap of monolayer PtSe2 facilitates the detailed characterization of defect‐induced gap states...
2D Janus transition metal dichalcogenide (TMD) semiconductor materials have attracted great interest for their potential applications. Because of the increased requirement for thermal management in 2D devices with single‐atom thickness, a fundamental understanding of interfacial thermal conduction (ITC) has emerging significance. In this work, the ITC of in‐plane heterostructures constructed using...
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