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In article number 1901070, Husam N. Alshareef and co‐workers successfully develop an epitaxial phase conversion process to make continuous and homogeneous monolayer MoS2 films at the wafer scale. The process was enabled by careful epitaxial growth of MoO2 and a subsequent sulfurization process. The resulting epitaxial films exhibit high‐performance excitonic and electronic properties that can be engineered...
To realize multifunctional devices at the wafer scale, the growth process of monolayer (ML) 2D semiconductors must meet two key requirements: 1) growth of continuous and homogeneous ML film at the wafer scale and 2) controllable tuning of the properties of the ML film. However, there is still no growth method available that fulfills both of these criteria. Here, the first report is presented on the...
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