The electrical properties of BaO-Nd2O3-Sm2O3-TiO2 ceramics doped with low loss glass or low melting point oxide B2O3 are evaluated by impedance spectroscopy. Glass or B2O3 is doped as liquid phase sintering aid. Doping of glass/B2O3 enhances both the growth in the longitudinal direction of the columnar crystal and the preferred orientation of (002). The grain size increases and grain boundary decreases with the increase of dopant. Both the grain and grain-boundary resistivities decrease with the increase of dopant. The grain boundary activation energy for charge transport is larger than that of the grain activation energy. Possible mechanisms for the electrical behavior of the liquid-phase sintered BaO-Nd2O3-Sm2O3-TiO2 ceramics are proposed and discussed.