Abstract. Fatigue-free Pb(Zr0.52Ti0.48)O3 (PZT) ferroelectric thin films were successfully prepared on indium tin oxide (ITO) coated glass substrates using the sol-gel method combined with a rapid thermal annealing process (RTA). The films post-annealed at a temperature of 700C for 2min by RTA process formed (110)-oriented Pb(Zr0.52Ti0.48)O3 thin films with pure perovskite structure, and had a good morphology as well. The good ferroelectricity of the prepared PZT films was confirmed by PE hysteresis loop measurements. Fatigue characteristics showed stable behavior. Degradation in polarization was not found while the repeating cycles were up to 1011, and a low leakage current density of 108A/cm2 was also obtained from the highly fatigue-resisted PZT thin films on ITO/glass substrates.