There is a great interest in monolithic 4H-SiC Junction Barrier Schottky (JBS) diodes with the capability of a high forward current for industrial power applications. In this paper, we report large-area monolithic 4H-SiC JBS diodes fabricated on a 10 µm 4H-SiC epitaxial layer doped to 6×10 15 cm −3 . JBS diodes with an active area of 30 mm 2 had a forward current of up to 330 A at a forward voltage of 5 V, which corresponds to a current density of 1100 A/cm 2 . A near ideal breakdown voltage of 1.6 kV was also achieved for a reverse current of up to 100 μA through the use of an optimum multiple floating guard rings (MFGR) termination, which is about 87.2% of the theoretical value. The differential specific-on resistance ( R SP-ON ) was measured to be 3.3 mΩ cm 2 , leading to a FOM (VB2/ R SP-ON ) value of 0.78 GW/cm 2 , which is very close to the theoretical limit of the tradeoff between the specific-on resistance and breakdown voltage for 4H-SiC unipolar devices.