Abstract. Electrical-current-induced Joule heating was applied to crystallization of 60-nm-thick amorphous silicon films formed on glass substrates. 3-s-pulsed voltages were applied to silicon films connected with a capacitance in parallel. Coincident irradiation with 28-ns-pulsed excimer laser melted films partially and reduced its resistance. Complete melting for 12s and a low cooling rate at 1.1108K/s were achieved by Joule heating from electrical energy accumulated in the capacitance at 0.22F. For 7.41017cm-3 phosphorus-doped films, analysis of temperature change in the electrical conductivity gave that the density of defect states localized at grain boundaries was 1.51012cm-2. Formation of 3.5-m-long crystalline grains was observed by transmission electron micrograph. Preferential crystalline orientation was (110).