The magnetic and the electrical properties of CuFe2O4/BaTiO3 thin films grown on highly-textured Pt(111)/TiO2/SiO2/Si(100) substrates were studied. Sintered BaTiO3 and CuFe2O4 pellets prepared by the conventional mixed oxide process were used as targets during deposition by using the ion-beam sputtering and the pulsed laser deposition techniques. The film structure is of a bilayer type, where the BaTiO3 layer lies underneath the CuFe2O4 layer. The CuFe2O4/BaTiO3 film stack was then annealed at a temperature between 700 and 750 °C, followed by either FC (fast-cooling) or SC (slow-cooling) treatment. The ferroelectric and the electrical properties were measured using a ferroelectric test system, a digital multimeter, and an impedance analyzer. The Magnetic hysteresis (M-H) behavior at room temperature was measured using a vibration sample magnetometer (VSM), and the maximum saturation magnetization (M s ) and coercivity (H c ) values were 700 emu/cm3 and 325 Oe, respectively.