This paper reviews the present status and gives outlook on future developments of quantum dot infrared photodetectors (QDIPs). At the beginning the paper summarizes the fundamental properties of QDIPs. Next, an emphasize is put on their potential developments. Investigations of the performance of QDIPs as compared to other types of infrared photodetectors are presented. A model is based on fundamental performance limitations enabling a direct comparison between different infrared material technologies. It is assumed that the performance is due to thermal generation in the active detector’s region. In comparative studies, the HgCdTe photodiodes, quantum well infrared photodetectors (QWIPs), type II superllatice photodiodes, Schottky barrier photoemissive detectors, doped silicon detectors, and high temperature superconductor detectors are considered.
Theoretical predictions indicate that only type II superlattice photodiodes and QDIPs are expected to compete with HgCdTe photodiodes. QDIPs theoretically have several advantages compared with QWIPs including the normal incidence response, lower dark current, higher operating temperature, higher responsivity and detectivity. The operating temperature for HgCdTe detectors is higher than for other types of photon detectors.
Comparison of QDIP performance with HgCdTe detectors gives evidence that the QDIP is suitable for high operation temperature. It can be expected that improvement in technology and design of QDIP detectors will make it possible to achieve both high sensitivity and fast response useful for practical application at room temperature.
Finally, issue associated with the development and exploitation of multispectral photodetectors from this new material is discussed. Discussions is focused on most recently on-going detector technology efforts in fabrication both photodetectors and focal plane arrays.