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This paper examines the feasibility of locally modifying the interface properties of the gold/silicon system using ballistic electron emission microscopy (BEEM). Distinctly different fabricated features have been observed in BEEM images of the Au/Si interface depending on the polarity of the applied voltage pulses. The discrepancy that exists in the modification behavior on specific samples may reveal that the previously proposed adatom terraces and atomic interdiffusion mechanisms are not sufficient to account for all of the observations here.