Abstract. Phosphorus ion (P+) implantations into 6H-SiC at room temperature (RT), 800C, and 1200C with mean concentrations of 1101851019/cm3 were performed to investigate the effects of hot-implantation on the electrical activation of P atoms. Improvement of the electrical activation of P atoms due to hot-implantation is found to depend on their implantation concentration, which can be divided into three regions. In the implantation with P in a low-concentration region (for example, 11018/cm3), no significant difference in the carrier concentrations among the samples implanted at RT and elevated temperatures is observed after annealing above 1400C. In a medium-concentration region, the carrier concentration increases with implantation temperature. When P ions were implanted in a high-concentration region (for example, 51019/cm3), the hot-implanted samples exhibit higher carrier concentration as compared with RT-implanted samples. Regarding hot-implantation, the carrier concentration in 800C-implanted samples is higher than that in the 1200C-implanted samples. This results can be interpreted as a degree of damage introduced by each implantation.